SiC metal semiconductor field-effect transistor

US7345309B2 · kind B2 · utility

Assignee

• Lockheed Martin Corporation · US

Inventors

• An-Ping Zhang · Niskayuna, US
• Larry Rowland · Scotia, US
• James William Kretchmer · Ballston Spa, US
• Jesse Berkley Tucker · Knightdale, US
• Edmund Kaminsky · Rexford, US

Key dates

• Filing date: Aug 31, 2004
• Grant date: Mar 18, 2008
• Expiry date: Nov 15, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor for suppressing surface effects caused by dangling bonds and interface states. Also, a sloped MESA fabrication method which utilizes a dielectric etch mask that protects the MESA top surface during MESA processing and enables formation of sloped MESA sidewalls.