Magnetic memory device and producing method thereof
US7345367B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2003 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Apr 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device exhibits improved writing characteristics by providing a magnetic flux concentrator which efficiently applies the magnetic field, which is generated by the writing word line, to the memory layer of the TMR element. The magnetic memory device (1) is composed of the TMR element (13), the writing word line (the first wiring) (11) which is electrically insulated from the TMR element (13), and the bit line (the second wiring) (12) which is electrically connected to the TMR element (13) and intersecting three-dimensionally with the writing word line (11), with the TMR element (13) interposed therebetween. The magnetic memory device (1) is characterized as follows. The magnetic flux concentrator (51) of high-permeability layer is formed along at least the lateral sides of the writing word line (11) and the side of the writing word line (11) which is opposite to the side facing the TMR element (13). At least either of the side walls of the magnetic flux concentrator (51) projects from the writing word line (11) toward the TMR element (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.