Read method and sensing device
US7345906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | May 18, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/062
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method for reading the memory cell in a passive matrix-addressable ferroelectric or electret memory array with memory cells in the form of ferroelectric or electret capacitors, sensing means connected to the bit line of memory cell is activated in order to initiate a charge measurement and a first charge value is registered, whereafter a switching voltage is applied to the memory cell and a second charge value is registered. A readout value is obtained by subtracting the first charge value from the second charge value. A sensing device for performing an embodiment of the method comprises a first amplifier stage with an integrator circuit and connected with a second amplifier stage (A2) following the first amplifier stage and with an integrator circuit, and a sampling capacitor connected between an output of the first amplifier stage and an input of the second amplifier stage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.