Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications

US7348206B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• North Carolina State University · US

Inventors

• David F. Bocian · Riverside, US
• Werner G. Kuhr · Riverside, US
• Jonathan S. Lindsey · Raleigh, US
• Rajeeve Balkrishna Dabke · Columbus, US
• Zhiming Liu · Englewood, US

Key dates

• Filing date: Oct 26, 2001
• Grant date: Mar 25, 2008
• Expiry date: Apr 27, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/701
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E-O— or an E-S— bond where E is the group IV element (e.g. Si, Ge, etc.). The procedure has been successfully used on both P- and n-type group IV element surfaces. The assemblies are stable under ambient conditions and can be exposed to repeated electrochemical cycling.