Method of making nitride-based compound semiconductor crystal and substrate
US7348278B2 · kind B2 · utility
2Cited by
2References
13Claims
0Family size
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Key dates
| Filing date | Jul 13, 2005 |
| Grant date | Mar 25, 2008 |
| Priority date | — |
| Expiry date | May 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a nitride-based compound semiconductor crystal has the step of growing a nitride-based compound semiconductor crystal with a predetermined thickness by using a nitride-based compound semiconductor substrate as a seed crystal. The nitride-based compound semiconductor substrate as the seed crystal is polished at both surfaces thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.