Composite field effect transistor
US7348826B1 · kind B1 · utility
23Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2006 |
| Grant date | Mar 25, 2008 |
| Priority date | — |
| Expiry date | Apr 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/302
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A composite field effect transistor, in accordance with one embodiment, includes a zener diode, a junction field effect transistor and a metal-oxide-semiconductor field effect transistor. A gate of the junction field effect transistor is coupled to an anode of the zener diode. A cathode of the zener diode is coupled to a gate of the metal-oxide-semiconductor field effect transistor. A drain of the metal-oxide-semiconductor field effect transistor is coupled to a source of the junction field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.