Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices
US7349262B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2006 |
| Grant date | Mar 25, 2008 |
| Priority date | — |
| Expiry date | Sep 30, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a silicon oxide nitride oxide semiconductor (SONOS) memory device is provided. The SONOS memory device includes a substrate, first and second impurity regions spaced apart on the substrate, a gate oxide layer formed over the substrate between the first and second impurity regions, a trap layer formed over the gate oxide layer, an insulation layer formed over the trap layer, and a gate electrode formed over the insulation layer. The method of programming the SONOS device includes writing data into the SONOS memory device by applying a first voltage to the first impurity region, a gate voltage to the gate electrode, and a second voltage to the second impurity region, where the second voltage is a negative voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.