Hee-soon Chae
11Patents
5h-index
19Co-inventors
55Inventor score
Filing activity: Dec 28, 2001 → May 14, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6936884B2 | Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory | Electricity | 38 | Expired |
| US7345898B2 | Complementary nonvolatile memory device | Electricity | 17 | Expired |
| US6670670B2 | Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same | Physics | 12 | Expired |
| US6946346B2 | Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element | Physics | 11 | Expired |
| US7202521B2 | Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same | Electricity | 11 | Expired |
| US7349262B2 | Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices | Physics | 5 | Active |
| US8139387B2 | Method of erasing a memory device including complementary nonvolatile memory devices | Electricity | 3 | Active |
| US7208365B2 | Nonvolatile memory device and method of manufacturing the same | Electricity | 3 | Active |
| US7112842B2 | Nonvolatile memory device and method of manufacturing the same | Electricity | 2 | Expired |
| US6664123B2 | Method for etching metal layer on a scale of nanometers | Electricity | 1 | Expired |
| US7719871B2 | Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.