Method for manufacturing semiconductor device
US7351595B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2004 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Oct 18, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2644
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a manufacturing method for a semiconductor device, a main body wafer having an interlayer insulating film is formed, and a monitor wafer on which a monitor element is formed is provided. Characteristics of the main body wafer are copied onto the monitor element by simultaneously processing the main body wafer and the monitor wafer through BPSG densification during formation of the interlayer insulating film. The characteristic of the monitor element is measured by checking a process influence of the monitor element. Manufacturing conditions are set in accordance with the process influence of the monitor element. Variations in electric characteristics of the main body wafer are reduced in accordance with the set manufacturing conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.