High-powered light emitting device with improved thermal properties
US7351599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2005 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Sep 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first and second contacts has a thickness greater than 3.5 microns. In some embodiments, a first heat extraction layer is connected to one of the first and second contacts. In some embodiments, one of the first and second contacts is connected to a submount by a solder interconnect having a length greater than a width. In some embodiments, an underfill is disposed between a submount and one of the first and second interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.