Semiconductor device having oxidized metal film and manufacture method of the same
US7351656B2 · kind B2 · utility
13Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2006 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Jan 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.