Etching solution for silicon oxide method of manufacturing a semiconductor device using the same
US7351667B2 · kind B2 · utility
7Cited by
2References
10Claims
0Family size
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Key dates
| Filing date | Oct 16, 2006 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Oct 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.