Gallium nitride materials and methods associated with the same
US7352015B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2005 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Aug 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/602
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor materials including a gallium nitride material region and methods associated with such structures are provided. The semiconductor structures include a strain-absorbing layer formed within the structure. The strain-absorbing layer may be formed between the substrate (e.g., a silicon substrate) and an overlying layer. It may be preferable for the strain-absorbing layer to be very thin, have an amorphous structure and be formed of a silicon nitride-based material. The strain-absorbing layer may reduce the number of misfit dislocations formed in the overlying layer (e.g., a nitride-based material layer) which limits formation of other types of defects in other overlying layers (e.g., gallium nitride material region), amongst other advantages. Thus, the presence of the strain-absorbing layer may improve the quality of the gallium nitride material region which can lead to improved device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.