Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier
US7352021B2 · kind B2 · utility
94Cited by
7References
14Claims
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Key dates
| Filing date | Jul 9, 2004 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Jul 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/302
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.