Method for fabricating a Johnsen-Rahbek electrostatic wafer clamp
US7352554B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2004 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Feb 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a J-R electrostatic clamp (ESC) and method for forming same. The ESC comprises a ceramic layer for clamping a wafer thereto, and a plurality of electrodes arranged across the ceramic layer in an interior region and a peripheral region of the backside surface, wherein a plurality of electrode groups are defined by electrodes in the interior regions and peripheral regions. A first insulating layer generally isolates the electrode groups from one another, and an interconnect layer comprising a plurality of electrically conductive vias and interconnects electrically connect the electrodes associated with each respective electrode group. Each electrode group comprises a connection node, wherein the respective electrode group is operable to connect to a respective voltage potential. A second insulating layer generally encapsulates the interconnect layer. The method comprises patterning the electrodes, first insulating layer, interconnect layer, and second insulating layer to form the ESC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.