Optical field concentrator using multiple low-index nano-layer configuration for CMOS compatible laser devices
US7352942B2 · kind B2 · utility
3Cited by
1References
21Claims
0Family size
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Key dates
| Filing date | Apr 24, 2006 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Apr 24, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/03688
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical field concentrator includes a plurality of waveguide layers comprising high index materials having a first defined thickness. At least one nano-layer structure is positioned between said waveguide layers. The at least one nano-layer structure comprises low index materials having a second defined thickness that is smaller than the first defined thickness. A plurality of cladding layers are positioned between the waveguide layers and the at least one nano-layer structure. The cladding layers have a third defined thickness that is larger than the first defined thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.