Method for correcting a mask pattern, a computer program product, a method for producing a photomask, and method for manufacturing a semiconductor device
US7353145B2 · kind B2 · utility
23Cited by
13References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Nov 9, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A computer implemented method for correcting a mask pattern, includes: preparing a designed mask pattern; obtaining a rough corrected mask pattern from the designed mask pattern by applying a rough correction; and obtaining a precision corrected mask pattern from the rough corrected mask pattern by applying a precision correction using a model based correction method with a precision model that simulates a transferred image of an exposure apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.