Polymer, resist protective coating material, and patterning process
US7354693B2 · kind B2 · utility
38Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Aug 4, 2005 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Apr 21, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2041
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from an overlay material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the overlay material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.