Directionally controlled growth of nanowhiskers

US7354850B2 · kind B2 · utility

Assignee

• QUNANO AB · SE

Inventors

• Werner Seifert · Bargteheide, DE
• Lars Samuelson · Malmö, SE
• Bjorn Jonas Ohlsson · Malmö, SE
• Lars Borgstrom · Henån, SE

Key dates

• Filing date: Feb 3, 2005
• Grant date: Apr 8, 2008
• Expiry date: Mar 14, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/825
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.