Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor
US7354866B2 · kind B2 · utility
1Cited by
12References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2006 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Sep 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for process integration in manufacture of a gate structure of a field effect transistor are disclosed. The method includes assembling an integrated substrate processing system having a metrology module and a vacuumed processing platform to perform controlled and adaptive plasma processes without exposing the substrate to a non-vacuumed environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.