Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor

US7355200B2 · kind B2 · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Eberhard Kurth · Radebeul, DE
• Christian Kunath · Dresden, DE
• Heinrich Grüger · Dresden, DE

Key dates

• Filing date: May 10, 2005
• Grant date: Apr 8, 2008
• Expiry date: Jun 22, 2025

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N27/333
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An ion-sensitive field effect transistor has a gate consisting of metal silicate. The gate of metal silicate provides high resistance to aggressive measured substances and further has a high long-term stability. The gate of the ion-sensitive field effect transistor may include a single layer gate, wherein the gate is arranged directly on the channel region.