Photoresist undercoat-forming material and patterning process
US7358025B2 · kind B2 · utility
43Cited by
8References
8Claims
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Key dates
| Filing date | Mar 10, 2006 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Apr 26, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0392
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A material comprising a specific bisphenol compound with a group of many carbon atoms is useful in forming a photoresist undercoat. The undercoat-forming material, optionally combined with an intermediate layer having an antireflective effect, has an absorptivity coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm and a high etching resistance as demonstrated by slow etching rates with CF4/CHF3 and Cl2/BCl3 gases for substrate processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.