Method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots
US7358101B2 · kind B2 · utility
15Cited by
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3Claims
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Key dates
| Filing date | Sep 6, 2005 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Apr 19, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/774
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots, it adopts high temperature processing and atmospheric-pressure chemical vapor deposition (APCVD), and directly deposit to form a silicon nitrite substrate containing 1˜10 nm distributed quantum dots, said distribution profile of quantum dot size from large to small is corresponding to from inner to outer layers of film respectively, and obtain a 400˜700 nm range of spectrum and white light source under UV photoluminescence or electro-luminescence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.