Method of manufacturing flash memory device
US7358138B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 21, 2006 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Oct 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
An embodiment of the present invention relates to a method of manufacturing a flash memory device. The method includes sequentially forming a tunnel oxide film, an oxide film, and a first conductive layer on a semiconductor substrate, infiltrating a first etchant between grains of the first conductive layer to form a plurality of nano-crystal points in the oxide film, removing the first conductive layer using a second etchant, wherein during the process of removing the first conductive layer, portions of the nano-crystal points of the oxide film are removed by the second etchant, thereby forming a plurality of nano-crystal formation holes in the oxide film, filling the plurality of holes with a non-conductive layer to form a plurality of nano-crystals respectively having an isolated shape, sequentially forming a dielectric layer and a second conductive layer on the oxide film including the plurality of nano-crystals, and sequentially patterning the second conductive layer, the dielectric layer, the oxide film including the nano-crystals, and the tunnel oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.