Methods of filling gaps by deposition on materials having different deposition rates
US7358190B2 · kind B2 · utility
3Cited by
8References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 11, 2003 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Jul 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming material in a gap in a substrate include forming a pattern to define a gap on a substrate. A bottom oxide layer is formed on a surface of the substrate and substantially filling the gap. The bottom oxide layer is etched back inside an opening in the gap to expose side walls of the gap so that a residual bottom oxide layer remains at a bottom of the gap. A top oxide layer is selectively deposited on the residual bottom oxide layer, wherein the top oxide layer is deposited in a first direction toward the opening at a faster rate than in a second direction away from the side walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.