Semiconductor memory cell, method for fabricating it and semiconductor memory device

US7358520B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Cay-Uwe Pinnow · Birkenfeld, DE
• Klaus-Dieter Ufert · Unterschleißheim, DE

Key dates

• Filing date: Mar 9, 2005
• Grant date: Apr 15, 2008
• Expiry date: Feb 23, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A semiconductor memory cell, a method for fabricating it and a semiconductor memory device. A phase change material region of a storage element of the semiconductor memory cell has been or is formed as a lining region of a wall region of a contact recess which passes all the way through an insulation region between a first electrode device and a second electrode device. Furthermore, the space or region of the contact recess which is not taken up by the material region of the storage element has been or is made substantially electrically insulating.