Complementary metal-oxide-semiconductor image sensor and method for fabricating the same
US7358552B2 · kind B2 · utility
6Cited by
6References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 26, 2005 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Oct 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A complementary metal-oxide-semiconductor (CMOS) image sensor and a method for fabricating the same are provided. The CMOS image sensor includes: a pixel region provided with a plurality of unit pixels, each including a buried photodiode and a floating diffusion region; and a logic region provided with CMOS devices for processing data outputted from the unit pixels, wherein a self-aligned silicide layer is formed on gate electrodes and source/drain regions of the CMOS devices in the logic region while a self-aligned silicide blocking layer is formed over the pixel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.