Device and method for producing single crystals by vapor deposition
US7361222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2004 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | May 2, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1016
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.