Photoresist polymer and photoresist composition containing the same
US7361447B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 17, 2004 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Oct 1, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F220/1804
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Photoresist polymers and photoresist compositions containing the same. Photoresist patterns of less than 50 nm are achieved with EUV (Extreme Ultraviolet) as an exposure light source with photoresist compositions comprising (i) a photoresist polymer comprising a polymerization repeating unit of Formula 2 or (ii) a photoresist polymer comprising a polymerization repeating unit of Formula 3 with polyvinylphenol. As a result, excellent etching resistance can be secured although the photoresist patterns have a very small thickness.wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, a, b, c, d, e, f and g are as defined in the specification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.