Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device
US7361554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2007 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Jun 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/691
Abstract
Disclosed are a multi-bit non-volatile memory device, a method of operating the same, and a method of manufacturing the multi-bit non-volatile memory device. A unit cell of the multi-bit non-volatile memory device may be formed on a semiconductor substrate may include: a plurality of channels disposed perpendicularly to the upper surface of the semiconductor substrate; a plurality of storage nodes disposed on opposite sides of the channels perpendicularly the upper surface of the semiconductor substrate; a control gate surrounding upper portions of the channels and the storage nodes, and side surfaces of the storage nodes; and an insulating film formed between the channels and the storage nodes, between the channels and the control gate, and between the storage nodes and the control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.