Sun-ae Seo
85Patents
9h-index
91Co-inventors
77Inventor score
Filing activity: Jun 25, 2003 → Oct 6, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8411498B2 | Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same | Electricity | 47 | Active |
| US7345898B2 | Complementary nonvolatile memory device | Electricity | 17 | Expired |
| US7602042B2 | Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same | Electricity | 17 | Expired |
| US6913984B2 | Method of manufacturing memory with nano dots | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7361554B2 | Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device | Electricity | 14 | Active |
| US7521704B2 | Memory device using multi-layer with a graded resistance change | Physics | 13 | Expired |
| US8274098B2 | Field effect transistor, logic circuit including the same and methods of manufacturing the same | Electricity | 13 | Active |
| US7400027B2 | Nonvolatile memory device having two or more resistance elements and methods of forming and using the same | Physics | 10 | Expired |
| US8159037B2 | Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure | Emerging Cross-Sectional Technologies | 9 | Active |
| US8101980B2 | Graphene device and method of manufacturing the same | Electricity | 9 | Active |
| US7924593B2 | Information storage devices and methods of operating the same | Physics | 9 | Active |
| US7935953B2 | Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same | Electricity | 9 | Active |
| US8466461B2 | Resistive random access memory and method of manufacturing the same | Electricity | 8 | Active |
| US7256447B2 | Multi-bit non-volatile memory device, method of operating the same, and method of manufacturing the multi-bit non-volatile memory device | Electricity | 8 | Expired |
| US7767502B2 | Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate | Electricity | 7 | Active |
| US8513653B2 | Electronic device using a two-dimensional sheet material, transparent display and methods of fabricating the same | Electricity | 7 | Active |
| US8427246B2 | Oscillators and methods of manufacturing and operating the same | Electricity | 6 | Active |
| US7998804B2 | Nonvolatile memory device including nano dot and method of fabricating the same | Electricity | 6 | Active |
| US8664439B2 | Graphene substituted with boron and nitrogen, method of fabricating the same, and transistor having the same | Electricity | 6 | Active |
| US7710757B2 | Magnetic track using magnetic domain wall movement and information storage device including the same | Emerging Cross-Sectional Technologies | 6 | Active |
| US8350247B2 | Resistive random access memory having a solid solution layer and method of manufacturing the same | Electricity | 6 | Active |
| US7791923B2 | Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element | Physics | 6 | Active |
| US8144504B2 | Method of operating magnetic random access memory device | Physics | 6 | Active |
| US8884345B2 | Graphene electronic device and method of fabricating the same | Emerging Cross-Sectional Technologies | 5 | Active |
| US7821809B2 | Nonvolatile memory device and method including resistor and transistor | Physics | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.