Methods of fabricating a semiconductor device using a selective epitaxial growth technique
US7361563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2005 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Sep 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are injected into the reaction chamber to selectively grow an epitaxial semiconductor layer on a sidewall and on a bottom surface of the recess. A selective etching gas is injected into the reaction chamber to selectively etch a fence of the epitaxial semiconductor layer which is adjacent to the sidewall of the recess and grown to a level that is higher than an upper surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.