Doped nitride film, doped oxide film and other doped films
US7361611B2 · kind B2 · utility
51Cited by
4References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 8, 2006 |
| Grant date | Apr 22, 2008 |
| Priority date | — |
| Expiry date | Feb 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.