System and method for patterning both sides of a substrate utilizing imprint lithography
US7363854B2 · kind B2 · utility
22Cited by
18References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 13, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Apr 6, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are a method and system for imprinting a pattern formed on surfaces of an imprint mask onto a double-sided substrate. A method includes deforming the surfaces of the first and second imprint stamps to produce respective first and second deformed surfaces, each having an arc therein. A Pressure is applied to bring the deformed first and second surfaces into intimate contact with the first and second substrate surfaces, respectively. The applied pressure substantially flattens the deformed surfaces. And to separate the two surfaces, the applied pressure is released.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.