Slurry for CMP and method of polishing substrate using same
US7364600B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 11, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Jul 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 μm or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 μm or less, particularly, the STI process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.