Crystal film, crystal substrate, and semiconductor device
US7364805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2002 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Feb 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.