Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device
US7364829B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2003 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Sep 7, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/11
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a resist pattern thickening material which can thicken a resist pattern to be thickened regardless of a material or a size thereof so as to form a fine space pattern, exceeding an exposure limit of exposure light. The resist pattern thickening material comprises: a resin; a crosslinking agent; and a nitrogen-containing compound. In a process for forming a resist pattern of the present invention, the resist pattern thickening material is applied on a surface of a resist pattern to be thickened, thereby forming a resist pattern. A process for manufacturing a semiconductor device of the present invention includes: applying the thickening material on a surface of a resist pattern to be thickened which is formed on an underlying layer, so as to thicken the resist pattern to be thickened and form a resist pattern; and patterning the underlying layer by etching using the resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.