Silicon phosphor electroluminescence device with nanotip electrode
US7364924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Feb 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B33/145
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electroluminescence (EL) device and a method are provided for fabricating said device with a nanotip electrode. The method comprises: forming a bottom electrode with nanotips; forming a Si phosphor layer adjacent the nanotips; and, forming a transparent top electrode. The Si phosphor layer is interposed between the bottom and top electrodes. The nanotips may have a tip base size of about 50 nanometers, or less, a tip height in the range of 5 to 50 nm, and a nanotip density of greater than 100 nanotips per square micrometer. Typically, the nanotips are formed from iridium oxide (IrOx) nanotips. A MOCVD process forms the Ir bottom electrode. The IrOx nanotips are grown from the Ir. In one aspect, the Si phosphor layer is a SRSO layer. In response to an SRSO annealing step, nanocrystalline SRSO is formed with nanocrystals having a size in the range of 1 to 10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.