Method for manufacturing gallium nitride light emitting diode devices
US7364926B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2006 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Nov 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A method for manufacturing GaN LED devices is disclosed herein. First, a LED epitaxial layer is formed on a provisional substrate. Part of the LED epitaxial layer is removed to form a plurality of LED epitaxial areas. Then, a first transparent conductive layer, a metal reflective layer, and a first metal bonding layer are sequentially formed on the plurality of LED epitaxial areas and then part of the first transparent conductive layer, the metal reflective layer, and the first metal bonding layer are removed. Next, a permanent substrate is provided. At least a metal layer and a second metal bonding layer are formed on the permanent substrate. Then, part of at least the metal layer and the second metal bonding layer are removed. Next, the provisional substrate is bonded to the permanent substrate by aligned wafer bonding method. Then, the provisional substrate is removed to expose a surface of the LED epitaxial layer and then an n-type electrode is formed on the surface. Next, the permanent substrate is cut to form a plurality of LED devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.