Semiconductor device and method of fabrication
US7364965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Apr 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a DRAM has a capacitor in which a dielectric film and an upper electrode are laminated on a lower electrode comprising a polysilicone, in which a natural oxide film oxidized by oxygen in the atmosphere grows to at least 1.5 nm on the surface of a lower electrode of the capacitor. Further, in forming the dielectric film, the dioxide film further grows in the case of using an oxidative raw material. This brings forth a reduction in capacitance, and an increase of a leakage current is caused.Therefore, after a dielectric film having a reduction property has been formed, the reduction property is promoted by a heat treatment to thereby reduce a dioxide film and realize making the dioxide film on the lower electrode surface thinner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.