Method for manufacturing semiconductor device having super junction construction
US7364971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2006 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | May 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device includes a body region, a drift region having a first part and a second part, and a trench gate electrode. The body region is disposed on the drift region. The first and second parts extend in an extending direction so that the second part is adjacent to the first part. The trench gate electrode penetrates the body region and reaches the drift region so that the trench gate electrode faces the body region and the drift region through an insulation layer. The trench gate electrode extends in a direction crossing with the extending direction of the first and second parts. The first part includes a portion near the trench gate electrode, which has an impurity concentration equal to or lower than that of the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.