Method of manufacturing gallium nitride based high-electron mobility devices
US7364988B2 · kind B2 · utility
73Cited by
14References
21Claims
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Key dates
| Filing date | Jun 8, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Jan 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
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