Method of enhancing the photoconductive properties of a semiconductor
US7364993B2 · kind B2 · utility
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5References
20Claims
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Key dates
| Filing date | Sep 11, 2003 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Oct 16, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475° C. or less. It has been found that be annealing at temperatures of 475° C., or less the carrier lifetime of the material and the resistivity can be optimized so as to obtain semiconductor with useful photoconductive properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.