Semiconductor device having carbon-containing metal silicide layer and method of fabricating the same
US7365010B2 · kind B2 · utility
2Cited by
3References
28Claims
0Family size
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Key dates
| Filing date | Dec 7, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Apr 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0275
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating semiconductor devices having a carbon-containing metal silicide layer and semiconductor devices fabricated by the methods are provided. A representative method includes the steps of preparing a semiconductor substrate and forming a gate electrode and source/drain regions on the semiconductor substrate, such that the gate electrode has a first metal silicide layer on an upper part thereof which contains carbon and the source/drain regions have second metal silicide layers on their substantially carbon-free upper parts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.