System for the preferential removal of silicon oxide
US7365013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2007 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Jan 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.