Anhydrous HF release of process for MEMS devices
US7365016B2 · kind B2 · utility
201Cited by
4References
23Claims
0Family size
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Key dates
| Filing date | Dec 22, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | May 20, 2026 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0132
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performing an in-situ vacuum evaporation of etch by-products at a temperature of more than about 100° C. and at vacuum level lower than the 40 Torr without exposure to ambient air.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.