CxHy sacrificial layer for cu/low-k interconnects
US7365026B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Jan 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor method of manufacturing involving low-k dielectrics is provided. The method includes depositing a hydrocarbon of the general composition CxHy on the surface of a low-k dielectric. The hydrocarbon layer is deposited by reacting a precursor material, preferably C2H4 or (CH3)2CHC6H6CH3, using a PECVD process. In accordance with embodiments of this invention, carbon diffuses into the low-k dielectric, thereby reducing low-k dielectric damage caused by plasma processing or etching. Other embodiments comprise a semiconductor device having a low-k dielectric, wherein the low-k dielectric has carbon-adjusted dielectric region adjacent a trench sidewall and a bulk dielectric region. In preferred embodiments, the carbon-adjusted dielectric region has a carbon concentration not more than about 5% less than in the bulk dielectric region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.