Silicon carbide semiconductor device and method for manufacturing the same
US7365363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2005 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Apr 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.