Double page programming system and method
US7366014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2006 |
| Grant date | Apr 29, 2008 |
| Priority date | — |
| Expiry date | Jul 28, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming an electrically programmable memory including a plurality of memory cells arranged in individually-selectable memory cell sets each including at least one memory cell. The programming method includes causing the memory cells of a selected memory cells set to be brought into a predetermined, starting programming state. Receiving a target value for the first data bits groups of the memory cells of the selected memory cells set. Receiving a target value for the second data bits groups of the memory cells of the selected memory cells set. After having received the target values of both the first and the second data bits groups, applying to the memory cells of the selected memory cells set a programming sequence adapted to cause the memory cells of the selected memory cells sets to be brought into a target programming state jointly determined by the target values of the first and second data bits groups.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.