Composite layer method for minimizing PED effect
US7368229B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2004 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Dec 2, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A novel composite layer structure method which is suitable for reducing post-exposure delay (PED) effects associated with fabricating a photolithography reticle or mask and eliminating or at least minimizing variations between intended and realized critical dimension values for a circuit pattern fabricated on the reticle or mask. The method includes providing a mask blank having a metal layer, providing a photoresist layer on the metal layer of the mask blank, providing a protective layer on the photoresist layer and photo-cracking the photoresist layer in the desired circuit pattern typically by electron beam exposure. During subsequent post-exposure delay periods, the protective layer prevents or minimizes Q-time narrowing of the photo-cracked photoresist, and consequently, prevents or minimizes narrowing of the critical dimension of a circuit pattern etched in the metal layer according to the width of the photo-cracked photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.